Samsung has created a new research lab in the United States to focus on developing next-generation three-dimensional (3D) DRAM, industry sources said on Sunday.
The new lab is operating under Device Solutions America (DSA) headquartered in Silicon Valley, which oversees Samsung’s semiconductor production in the US and will work to develop an upgraded DRAM model to allow Samsung to lead the global 3D memory chip market, according to the sources.
In October, the South Korean tech giant said it is preparing new 3D structures for sub-10-nanometer DRAM, allowing larger single-chip capacities that can exceed 100 gigabits, reports Yonhap news agency.
Samsung succeeded in commercializing 3D vertical NAND flash memory chips for the first time in the industry in 2013.
